Your roadmap · आपका रोडमैप
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Admission & first meetingप्रवेश और पहली मुलाकातEnquire at your nearest NDSS centre, meet the teacher, fix the batch time and get your study material.
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Part 1 of the syllabusपाठ्यक्रम भाग 1Unit-wise coaching with notes and doubt classes.
Unit 1: Crystal Growth and Wafer PreparationUnit 2: Oxidation and EpitaxyUnit 3: Lithography and Etching
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Part 2 of the syllabusपाठ्यक्रम भाग 2Unit-wise coaching with notes and doubt classes.
Unit 4: Diffusion and Ion ImplantationUnit 5: Metallization and IC Process Integration
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Unit tests & assignmentsयूनिट टेस्टRegular tests in the university / board pattern.
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Semester 6 exam (university / board)विश्वविद्यालय / बोर्ड परीक्षाPrevious papers and full revision before the exam.
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Online tests & resultऑनलाइन टेस्ट और रिज़ल्टTake the tests online; your marks and result show in your student login and at the centre.
Syllabus · पाठ्यक्रम
1 subject · 5 chapters · 25 topics
01Unit 1: Crystal Growth and Wafer Preparation
5 topics+
- Electronic-grade silicon (Siemens process)
- Czochralski crystal growth
- Float-zone method
- Crystal defects and doping uniformity
- Wafer shaping, slicing, polishing and cleaning
02Unit 2: Oxidation and Epitaxy
5 topics+
- Dry and wet thermal oxidation
- Deal-Grove model of oxidation kinetics
- Oxide properties and charges
- Vapour-phase epitaxy and molecular beam epitaxy
- CVD of polysilicon, nitride and oxide
03Unit 3: Lithography and Etching
5 topics+
- Photolithography process steps
- Positive and negative photoresists
- Contact, proximity and projection printing; resolution
- E-beam and X-ray lithography
- Wet etching and dry (plasma, RIE) etching
04Unit 4: Diffusion and Ion Implantation
5 topics+
- Fick's laws of diffusion
- Constant-source and limited-source diffusion profiles
- Diffusion length and junction depth
- Ion implantation: range, straggle and annealing
- Comparison of diffusion and implantation
05Unit 5: Metallization and IC Process Integration
5 topics+
- Aluminium and copper interconnects
- Electromigration and junction spiking
- Device isolation: LOCOS and shallow trench isolation
- NMOS and twin-tub CMOS process flow
- Packaging and yield
About this course
You will be able to
- Describe the preparation of electronic-grade silicon and single-crystal wafers
- Explain thermal oxidation and epitaxy and calculate oxide growth with the Deal-Grove model
- Explain photolithography, resists and etching and estimate the resolution of an exposure system
- Calculate diffusion profiles and compare diffusion with ion implantation
- Describe metallization, isolation and the sequence of steps of a CMOS process
- Relate each fabrication step to device performance and yield
Who it is for
- B.Tech Electronics & Communication Engineering students of Semester 6 (AKTU)
- B.Tech EE / EI students who take this subject as an elective
- Students preparing for GATE ECE who want to revise this subject
What you need
- Semiconductor devices and basic electronics (Semesters 3-4)
- Basic chemistry and physics of semiconductors
Online tests & result
Practice and unit tests online; marks and result show in your student login and at the centre.
Student login →
Questions
Which syllabus does the VLSI Technology course follow?
It follows the current AKTU B.Tech (ECE) scheme, Semester 6. If your university or college uses a different scheme, the centre follows your own university syllabus.
Do you cover numericals and previous year questions?
Yes. Each unit is taught with solved numericals and AKTU previous-year questions.
Is this course theory only?
Yes, it is a theory elective; process flows are explained with diagrams drawn in class.
