Your roadmap · आपका रोडमैप
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Admission & first meetingप्रवेश और पहली मुलाकातEnquire at your nearest NDSS centre, meet the teacher, fix the batch time and get your study material.
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Part 1 of the syllabusपाठ्यक्रम भाग 1Unit-wise coaching with notes and doubt classes.
Unit 1: MOSFET Scaling and Short-Channel EffectsUnit 2: Advanced MOS StructuresUnit 3: Heterostructure Devices
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Part 2 of the syllabusपाठ्यक्रम भाग 2Unit-wise coaching with notes and doubt classes.
Unit 4: Power Semiconductor DevicesUnit 5: Nanoscale and Emerging Devices
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Unit tests & assignmentsयूनिट टेस्टRegular tests in the university / board pattern.
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Semester 5 exam (university / board)विश्वविद्यालय / बोर्ड परीक्षाPrevious papers and full revision before the exam.
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Online tests & resultऑनलाइन टेस्ट और रिज़ल्टTake the tests online; your marks and result show in your student login and at the centre.
सिलेबस · पाठ्यक्रम
1 subject · 5 chapters · 25 topics
01Unit 1: MOSFET Scaling and Short-Channel Effects
5 टॉपिक+
- MOS capacitor and threshold voltage review
- Constant-field and constant-voltage scaling
- Short-channel effects: VT roll-off, DIBL, velocity saturation
- Hot-carrier effects and punch-through
- Gate leakage and subthreshold conduction
02Unit 2: Advanced MOS Structures
5 टॉपिक+
- SOI MOSFET
- FinFET and multi-gate transistors
- High-k dielectrics and metal gates
- Strained silicon
- Tunnel FET
03Unit 3: Heterostructure Devices
5 टॉपिक+
- Heterojunctions and band alignment
- Compound semiconductors: GaAs, InP, GaN
- HEMT and two-dimensional electron gas
- Heterojunction bipolar transistor
- RF and microwave applications
04Unit 4: Power Semiconductor Devices
5 टॉपिक+
- Power MOSFET structures
- IGBT
- Wide band-gap materials: SiC and GaN
- SiC MOSFET and GaN HEMT power devices
- Figures of merit
05Unit 5: Nanoscale and Emerging Devices
5 टॉपिक+
- Quantum confinement: wells, wires and dots
- Carbon nanotube FET
- Single-electron transistor
- Spintronic devices
- Memristors
About this course
आप यह कर पाएँगे
- Explain MOSFET scaling and short-channel effects
- Describe SOI, FinFET, high-k metal gate and other advanced MOS structures
- Explain heterojunctions, HEMTs and HBTs and compound semiconductors
- Compare silicon, SiC and GaN power devices
- Describe quantum-confined and emerging nanoscale devices
यह किसके लिए है
- B.Tech Electronics & Communication Engineering students of Semester 5 under AKTU who have chosen this Departmental Elective
- Students interested in VLSI, semiconductor industry and research
आपको क्या चाहिए
- Electronic Devices (Semester 3)
Online tests & result
Practice and unit tests online; marks and result show in your student login and at the centre.
Student login →
सवाल
Which syllabus is followed?
The current AKTU (Dr. A.P.J. Abdul Kalam Technical University, Lucknow) B.Tech syllabus of Advanced Semiconductor Devices (Electronics & Communication Engineering, Semester 5). If your university or college follows a different syllabus, the centre teaches from your own university syllabus.
Is this a compulsory subject?
No. In the AKTU scheme it is offered as a Departmental Elective-II option in Semester 5 of Electronics & Communication Engineering; it is taught for students who have chosen this elective.
How is the subject examined?
AKTU assesses it through sessional tests, assignments and attendance, and an end-semester university examination; the centre covers every unit with theory, derivations and numericals.
Are previous-year questions practised?
Yes. Unit-wise AKTU previous-year questions, short-answer questions and the test series are solved in class.
